A study of low temperature crystallization of amorphous thin film indium-tin-oxide
Identifieur interne : 013F06 ( Main/Repository ); précédent : 013F05; suivant : 013F07A study of low temperature crystallization of amorphous thin film indium-tin-oxide
Auteurs : RBID : Pascal:99-0260711Descripteurs français
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- 6855J, 7361J, 6143D, 7866J, 7847, Etude expérimentale, Cristallisation, Couche mince semiconductrice, Semiconducteur amorphe, TEM, Facteur réflexion, Indium composé, Etain composé, Dépôt faisceau électronique, Résistivité électrique, Diffraction RX, Recuit, Densité porteur charge, Nucléation, Spectre résolution temporelle.
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Abstract
Deposition of tin-doped-indium-oxide (ITO) on unheated substrates via low energy processes such as electron-beam deposition can result in the formation of amorphous films. The amorphous-to-crystalline transformation was studied in this system using in situ resistivity, time resolved reflectivity, glancing incidence angle x-ray diffraction, and transmission electron microscopy. The resistivity of 180 nm thick In2O3(9.9wt.%SnO2) was monitored during isothermal anneals at 125, 135, 145, and 165°C. The dependence of the resistance on the volume fraction of crystalline phase was established using glancing incidence angle x-ray diffraction and a general two phase resistivity model for this system was developed. These studies show that, upon annealing, as-deposited amorphous ITO undergoes both a structural relaxation and crystallization. Structural relaxation of the amorphous material includes local ordering that increases the ionized vacancy concentration which, in turn, increases the carrier density in the material. Kinetic growth parameters were extracted from the data, which reveal that the relaxation of the amorphous structure occurs via a process that obeys a first order reaction rate law, while crystallization occurs via classical nucleation and growth with a growth mode parameter that is consistent with two- to three-dimensional transformation geometry. Both the relaxation and crystallization processes have an activation energy of approximately 1.3±0.2eV. Time resolved reflectivity analysis of the electron beam deposited ITO reveals that there is a sharp and monotonic decrease in reflectivity during the anneal of the sample which is associated with the amorphous relaxation process. © 1999 American Institute of Physics.
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Box D., Providence</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Arconium, Providence, Rhode Island 02912</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Arconium, Providence</wicri:cityArea></affiliation></author><author><name sortKey="Whitson, T" uniqKey="Whitson T">T. Whitson</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Brown University, Division of Engineering, P.O. Box D., Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Brown University, Division of Engineering, P.O. Box D., Providence</wicri:cityArea></affiliation></author><author><name sortKey="Janiac, D" uniqKey="Janiac D">D. Janiac</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Brown University, Division of Engineering, P.O. Box D., Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Brown University, Division of Engineering, P.O. Box D., Providence</wicri:cityArea></affiliation></author><author><name sortKey="Beresford, R" uniqKey="Beresford R">R. Beresford</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Brown University, Division of Engineering, P.O. Box D., Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Brown University, Division of Engineering, P.O. Box D., Providence</wicri:cityArea></affiliation></author><author><name sortKey="Yang, Cleva Ow" uniqKey="Yang C">Cleva Ow Yang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Brown University, Division of Engineering, P.O. Box D., Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Brown University, Division of Engineering, P.O. Box D., Providence</wicri:cityArea></affiliation></author><author><name sortKey="Lewis, Brian" uniqKey="Lewis B">Brian Lewis</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Brown University, Division of Engineering, P.O. Box D., Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Rhode Island</region></placeName><wicri:cityArea>Brown University, Division of Engineering, P.O. Box D., Providence</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0260711</idno><date when="1999-06-15">1999-06-15</date><idno type="stanalyst">PASCAL 99-0260711 AIP</idno><idno type="RBID">Pascal:99-0260711</idno><idno type="wicri:Area/Main/Corpus">015074</idno><idno type="wicri:Area/Main/Repository">013F06</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous semiconductors</term><term>Annealing</term><term>Carrier density</term><term>Crystallization</term><term>Electrical resistivity</term><term>Electron beam deposition</term><term>Experimental study</term><term>Indium compounds</term><term>Nucleation</term><term>Reflectivity</term><term>Semiconductor thin films</term><term>TEM</term><term>Time resolved spectra</term><term>Tin compounds</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6855J</term><term>7361J</term><term>6143D</term><term>7866J</term><term>7847</term><term>Etude expérimentale</term><term>Cristallisation</term><term>Couche mince semiconductrice</term><term>Semiconducteur amorphe</term><term>TEM</term><term>Facteur réflexion</term><term>Indium composé</term><term>Etain composé</term><term>Dépôt faisceau électronique</term><term>Résistivité électrique</term><term>Diffraction RX</term><term>Recuit</term><term>Densité porteur charge</term><term>Nucléation</term><term>Spectre résolution temporelle</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Deposition of tin-doped-indium-oxide (ITO) on unheated substrates via low energy processes such as electron-beam deposition can result in the formation of amorphous films. The amorphous-to-crystalline transformation was studied in this system using in situ resistivity, time resolved reflectivity, glancing incidence angle x-ray diffraction, and transmission electron microscopy. The resistivity of 180 nm thick In<sub>2</sub>O<sub>3</sub>(9.9wt.%SnO<sub>2</sub>) was monitored during isothermal anneals at 125, 135, 145, and 165°C. The dependence of the resistance on the volume fraction of crystalline phase was established using glancing incidence angle x-ray diffraction and a general two phase resistivity model for this system was developed. These studies show that, upon annealing, as-deposited amorphous ITO undergoes both a structural relaxation and crystallization. Structural relaxation of the amorphous material includes local ordering that increases the ionized vacancy concentration which, in turn, increases the carrier density in the material. Kinetic growth parameters were extracted from the data, which reveal that the relaxation of the amorphous structure occurs via a process that obeys a first order reaction rate law, while crystallization occurs via classical nucleation and growth with a growth mode parameter that is consistent with two- to three-dimensional transformation geometry. Both the relaxation and crystallization processes have an activation energy of approximately 1.3±0.2eV. Time resolved reflectivity analysis of the electron beam deposited ITO reveals that there is a sharp and monotonic decrease in reflectivity during the anneal of the sample which is associated with the amorphous relaxation process. © 1999 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>85</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>A study of low temperature crystallization of amorphous thin film indium-tin-oxide</s1></fA08><fA11 i1="01" i2="1"><s1>PAINE (David C.)</s1></fA11><fA11 i1="02" i2="1"><s1>WHITSON (T.)</s1></fA11><fA11 i1="03" i2="1"><s1>JANIAC (D.)</s1></fA11><fA11 i1="04" i2="1"><s1>BERESFORD (R.)</s1></fA11><fA11 i1="05" i2="1"><s1>YANG (Cleva Ow)</s1></fA11><fA11 i1="06" i2="1"><s1>LEWIS (Brian)</s1></fA11><fA14 i1="01"><s1>Brown University, Division of Engineering, P.O. Box D., Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Arconium, Providence, Rhode Island 02912</s1></fA14><fA20><s1>8445-8450</s1></fA20><fA21><s1>1999-06-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0260711</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Deposition of tin-doped-indium-oxide (ITO) on unheated substrates via low energy processes such as electron-beam deposition can result in the formation of amorphous films. The amorphous-to-crystalline transformation was studied in this system using in situ resistivity, time resolved reflectivity, glancing incidence angle x-ray diffraction, and transmission electron microscopy. The resistivity of 180 nm thick In<sub>2</sub>O<sub>3</sub>(9.9wt.%SnO<sub>2</sub>) was monitored during isothermal anneals at 125, 135, 145, and 165°C. The dependence of the resistance on the volume fraction of crystalline phase was established using glancing incidence angle x-ray diffraction and a general two phase resistivity model for this system was developed. These studies show that, upon annealing, as-deposited amorphous ITO undergoes both a structural relaxation and crystallization. Structural relaxation of the amorphous material includes local ordering that increases the ionized vacancy concentration which, in turn, increases the carrier density in the material. Kinetic growth parameters were extracted from the data, which reveal that the relaxation of the amorphous structure occurs via a process that obeys a first order reaction rate law, while crystallization occurs via classical nucleation and growth with a growth mode parameter that is consistent with two- to three-dimensional transformation geometry. Both the relaxation and crystallization processes have an activation energy of approximately 1.3±0.2eV. Time resolved reflectivity analysis of the electron beam deposited ITO reveals that there is a sharp and monotonic decrease in reflectivity during the anneal of the sample which is associated with the amorphous relaxation process. © 1999 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C61J</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A43D</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H66J</s0></fC02><fC02 i1="05" i2="3"><s0>001B70H47</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6855J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7361J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6143D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7866J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7847</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Cristallisation</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Crystallization</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Couche mince semiconductrice</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor thin films</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur amorphe</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Amorphous semiconductors</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>TEM</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>TEM</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Facteur réflexion</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Reflectivity</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Etain composé</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Tin compounds</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Dépôt faisceau électronique</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Electron beam deposition</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Résistivité électrique</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Electrical resistivity</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Diffraction RX</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>XRD</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Recuit</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Annealing</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Densité porteur charge</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Carrier density</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Nucléation</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Nucleation</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Spectre résolution temporelle</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Time resolved spectra</s0></fC03><fN21><s1>158</s1></fN21><fN47 i1="01" i2="1"><s0>9920M000281</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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